1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
100
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
100
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
67N10
67
A
75N10
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
67N10
268
A
75N10
300
A
I
AR
T
C
= 25
C
67N10
67
A
75N10
75
A
E
AR
T
C
= 25
C
30
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
TO-247 AD (IXFH)
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
m
A
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
250
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
67N10
0.025
W
75N10
0.020
W
Pulse test, t
300
m
s, duty cycle d
2 %
TO-204 AE (IXFM)
V
DSS
I
D25
R
DS(on)
IXFH/IXFM 67 N10
100 V
67 A
25 m
W
IXFH/IXFM 75 N10
100 V
75 A
20 m
W
t
rr
200 ns
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Features
q
International standard packages
q
Low R
DS (on)
HDMOS
TM
process
q
Rugged polysilicon gate cell structure
q
Unclamped Inductive Switching (UIS)
rated
q
Low package inductance
- easy to drive and to protect
q
Fast intrinsic Rectifier
Applications
q
DC-DC converters
q
Synchronous rectification
q
Battery chargers
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
q
AC motor control
q
Temperature and lighting controls
q
Low voltage relays
Advantages
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q
Space savings
q
High power density
D
G
91521F (10/95)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= I
D25
, pulse test
25
30
S
C
iss
4500
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1600
pF
C
rss
800
pF
t
d(on)
20
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60
110
ns
t
d(off)
R
G
= 2
W,
(External)
80
110
ns
t
f
60
90
ns
Q
g(on)
180
260
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
36
70
nC
Q
gd
85
160
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
67N10
67
A
75N10
75
A
I
SM
Repetitive;
67N10
268
A
pulse width limited by T
JM
75N10
300
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.75
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
I
F
= 25 A, -di/dt = 100 A/
m
s,
T
J
=
25
C
200
ns
V
R
= 25 V
T
J
= 125
C
300
ns
TO-204 AE (IXFM) Outline
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
- 22.22
- 0.875
C
6.40 11.40
0.252 0.449
D
1.45
1.60
0.057 0.063
E
1.52
3.43
0.060 0.135
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 26.66
0.991 1.050
IXFH 67N10
IXFH 75N10
IXFM 67N10
IXFM 75N10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
IXFH 67N10
IXFH 75N10
IXFM 67N10
IXFM 75N10
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV
/
V
G(t
h
)
-
Nor
m
a
li
zed
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
Am
peres
0
20
40
60
80
75N10
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
DS
(
o
n)
- N
o
rm
a
l
i
z
e
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
20
40
60
80
100 120 140 160
R
DS
(
o
n)
- N
o
rm
a
l
i
z
e
d
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
GS
= 10V
V
GS
= 15V
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
peres
0
25
50
75
100
125
150
T
J
= 125C
V
DS
- Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
- A
m
per
e
s
0
50
100
150
200
8V
5V
V
GS
= 10V
9V
7V
6V
T
J
= 25C
I
D
= 37.5A
67N10
BV
DSS
T
J
= 25C
T
J
= 25C
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
4 - 4
2000 IXYS All rights reserved
IXFH 67N10
IXFH 75N10
IXFM 67N10
IXFM 75N10
V
DS
- Volts
1
10
100
I
D
- A
m
pe
re
s
1
10
100
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
V
GS
-
V
o
l
t
s
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volt
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
S
- A
m
pe
re
s
0
25
50
75
100
125
150
V
DS
- Volts
0
5
10
15
20
25
Ca
pac
i
t
an
ce
-
pF
0
1000
2000
3000
4000
5000
6000
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
her
mal
R
e
sp
ons
e -
K/
W
0.001
0.01
0.1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
Single pulse
C
oss
C
iss
10s
100s
1ms
10ms
100ms
V
DS
= 50V
I
D
= 37.5A
I
G
= 1mA
Limited by R
DS(on)
C
rss
T
J
= 125C
T
J
= 25C
D=0.01
f = 1MHz
V
DS
= 25V
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
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